Reverse annealing of boron doped polycrystalline silicon
- Authors
- Jin, Beop-Jong; Hong, Won-Eui; Kim, Deok Hoi; Uemoto, Tstomu; Kim, Chi Woo; Ro, Jae-Sang
- Issue Date
- 31-Jul-2008
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- doping; activation; reverse annealing; poly-Si; TFT
- Citation
- THIN SOLID FILMS, v.516, no.18, pp.6321 - 6324
- Journal Title
- THIN SOLID FILMS
- Volume
- 516
- Number
- 18
- Start Page
- 6321
- End Page
- 6324
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/22706
- DOI
- 10.1016/j.tsf.2007.12.120
- ISSN
- 0040-6090
- Abstract
- Thermal activation was carried out using polycrystalline silicon (poly-Si) produced through sequential-lateral-solidification or excimer-lasercrystallization (ELQ after 13+ ion shower doping. The activation efficiency of the ELC samples was found to be higher than that of the SLS ones. In this regard, grain boundaries seemed to play a critical role in terms of the activation of dopants in poly-Si at low temperatures. Reverse annealing, in which a continuous loss of charge carriers occurs, was found in this study at temperatures ranging between 400 'C and 650 'C. The samples treated by rapid thermal annealing showed a lower sheet resistance than those treated by furnace annealing. Rapid thermal annealing was found to exhibit a higher activation efficiency than furnace annealing. Reverse annealing is believed to play an important role in terms of activation efficiency. (c) 2008 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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