온도에 의존하는 전기적 측정을 이용한 분자 메모리 소자의 전하 이동 메커니즘 분석Analysis of Charge Transfer Mechanism in Molecular Memory Device using Temperature-dependent Electrical Measurement
- Other Titles
- Analysis of Charge Transfer Mechanism in Molecular Memory Device using Temperature-dependent Electrical Measurement
- Authors
- 최경민; 구자룡; 김영관; 권상직
- Issue Date
- 2008
- Publisher
- 한국전기전자재료학회
- Keywords
- Molecular memory; Direct tunneling; Hopping conduction; Simmons model
- Citation
- 전기전자재료학회논문지, v.21, no.7, pp.615 - 619
- Journal Title
- 전기전자재료학회논문지
- Volume
- 21
- Number
- 7
- Start Page
- 615
- End Page
- 619
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23097
- ISSN
- 1226-7945
- Abstract
- A molecular memory device which has a structure of Al/Al₂O₃/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the Al₂O₃, organic monolayer and Ti interfaces.
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Collections - College of Engineering > Department of Science > 1. Journal Articles
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