Electrochemical process for through via 3D SiP without CMP and lithographic processes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, S.-E. | - |
dc.contributor.author | Kim, S.-H. | - |
dc.contributor.author | Moon, Y.-S. | - |
dc.contributor.author | Ko, Y.-K. | - |
dc.contributor.author | Park, K.-J. | - |
dc.contributor.author | Lee, J.-H. | - |
dc.date.accessioned | 2022-01-13T08:45:24Z | - |
dc.date.available | 2022-01-13T08:45:24Z | - |
dc.date.created | 2022-01-04 | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23485 | - |
dc.description.abstract | A serial electrochemical process consist of copper via filling, electropolishing, electroless copper plating and electroless tin plating is presented for the TSV 3D SiP application. Defect-free copper via filling was achieved by controlling current modes and additives. After via filling, electropolishing was performed to planarize over-plated copper. Electropolishing within the potential of mass-transfer region and with the assistance of additives, fine polished surface without thickness disparity was achieved. For bump formation process, electroless copper and tin plating which is a self-aligned process was applied. Consequently, Cu/Sn bump on via patterned wafer was obtain without using the conventional CMP and lithographic processes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.title | Electrochemical process for through via 3D SiP without CMP and lithographic processes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, J.-H. | - |
dc.identifier.scopusid | 2-s2.0-84876924342 | - |
dc.identifier.bibliographicCitation | Proceedings - 2008 International Symposium on Microelectronics, IMAPS 2008, pp.434 - 437 | - |
dc.relation.isPartOf | Proceedings - 2008 International Symposium on Microelectronics, IMAPS 2008 | - |
dc.citation.title | Proceedings - 2008 International Symposium on Microelectronics, IMAPS 2008 | - |
dc.citation.startPage | 434 | - |
dc.citation.endPage | 437 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Copper via filling | - |
dc.subject.keywordAuthor | Electroless Cu/Sn bump | - |
dc.subject.keywordAuthor | Electropolishing | - |
dc.subject.keywordAuthor | TSV 3D SiP | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.