NiO thin films by MOCVD of Ni(dmamb)(2) and their resistance switching phenomena
DC Field | Value | Language |
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dc.contributor.author | Min, K.-C. | - |
dc.contributor.author | Kim, M. | - |
dc.contributor.author | You, Y.-H. | - |
dc.contributor.author | Lee, S. S. | - |
dc.contributor.author | Lee, Y. K. | - |
dc.contributor.author | Chung, T.-M. | - |
dc.contributor.author | Kim, C. G. | - |
dc.contributor.author | Hwang, J.-H. | - |
dc.contributor.author | An, K.-S. | - |
dc.contributor.author | Lee, N.-S. | - |
dc.contributor.author | Kim, Y. | - |
dc.date.accessioned | 2022-01-14T07:41:45Z | - |
dc.date.available | 2022-01-14T07:41:45Z | - |
dc.date.created | 2022-01-14 | - |
dc.date.issued | 2007-09-25 | - |
dc.identifier.issn | 0257-8972 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23538 | - |
dc.description.abstract | We have synthesized the volatile, liquid, nickel precursor Ni(dmamb)(2), nickel bis(1-dimethylamino-2-methyl-2-butanolate), Ni[OC(CH3) (C2H5)CH2N(CH3)(2)](2), and employed it in the MOCVD of nickel oxide (NiO). A stainless steel, cold-wall, low-pressure reactor was employed to grow the NiO films on Si and Pt/SiO2/Si substrates. In addition, the resistance switching property of the Pt/NiO/Pt capacitor structure was investigated. The substrate temperature was varied in the range 230-410 degrees C. The films deposited were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and I-V measurements. They were polycrystalline showing dominantly the NiO (I 11) peak in their X-ray diffraction patterns. The films were found to be almost stoichiometric with the Ni:O ratio of 1.1:0.9 and no appreciable amount of carbon incorporation was detected by XPS. The I-V measurements revealed an interesting switching property of the NiO films showing low and high resistance states thereby suggesting their application as ReRAM devices. (c) 2007 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | NICKEL-OXIDE FILMS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | ATOMIC LAYER EPITAXY | - |
dc.title | NiO thin films by MOCVD of Ni(dmamb)(2) and their resistance switching phenomena | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, J.-H. | - |
dc.identifier.doi | 10.1016/j.surfcoat.2007.04.120 | - |
dc.identifier.scopusid | 2-s2.0-34547687900 | - |
dc.identifier.wosid | 000249340400085 | - |
dc.identifier.bibliographicCitation | SURFACE & COATINGS TECHNOLOGY, v.201, no.22-23, pp.9252 - 9255 | - |
dc.relation.isPartOf | SURFACE & COATINGS TECHNOLOGY | - |
dc.citation.title | SURFACE & COATINGS TECHNOLOGY | - |
dc.citation.volume | 201 | - |
dc.citation.number | 22-23 | - |
dc.citation.startPage | 9252 | - |
dc.citation.endPage | 9255 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NICKEL-OXIDE FILMS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ATOMIC LAYER EPITAXY | - |
dc.subject.keywordAuthor | nickel oxide | - |
dc.subject.keywordAuthor | Nickel bis(1-dimethylamino-2-methyl-2-butanolate) | - |
dc.subject.keywordAuthor | resistance switching phenomenon | - |
dc.subject.keywordAuthor | resistive random access memory | - |
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