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Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers

Authors
Im, H. C.Choo, D. C.Kim, T. W.Kim, J. H.Seo, J. H.Kim, Y. K.
Issue Date
23-Apr-2007
Publisher
ELSEVIER SCIENCE SA
Keywords
organic light-emitting diodes; electrical properties; optical properties; nickel oxide
Citation
THIN SOLID FILMS, v.515, no.12, pp.5099 - 5102
Journal Title
THIN SOLID FILMS
Volume
515
Number
12
Start Page
5099
End Page
5102
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23604
DOI
10.1016/j.tsf.2006.10.021
ISSN
0040-6090
Abstract
The electrical and the optical properties of organic light-emitting diodes (OLEDs) fabricated utilizing nickel-oxide (NiO) buffer layers between the anodes and the hole transport layers were investigated. The NiO layer was formed by using a thermally evaporated nickel thin film and a subsequent oxidation process. The tunneling holes in the OLED were increased due to the existence of the NiO layer between the anode and the hole transport layer, resulting in enhanced efficiency for the OLED. These results indicate that OLEDs with NiO buffer layers hold promise for potential applications in highly-efficient flat-panel displays. (c) 2006 Elsevier B.V. All rights reserved.
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