전기도금 공정으로 제조한 Bi-Te박막의 열전특성 및미세열전소자 형성용 포토레지스트 공정

Abstract

Thermoelectric properties of the electrodeposited Bi-Te films and photoresist process have been investigated to apply for thermoelectric thin film devices. After plating in Bi-Te solutions of 20 mM concentration, which were prepared by dissolving Bi2O3 and TeO2 into 1M HNO3, thermoelectric properties of the films were characterized with variation of the Te/(Bi+Te) ratio in a plating solution. With increasing the Te/(Bi+Te) ratio in the plating solution from 0.5 to 0.65, Seebeck coefficient of Bi-Te films changed from -59mV/K to -48mV/K and electrical resistivity was lowered from 1 mW-cm to 0.8 mW-cm due to the increase in the electron concentration. Maximum power factor of 3.5´10-4 W/K2-m was obtained for the Bi-Te film with the Bi2Te3 stoichiometric composition. Using multilayer overhang process, the photoresist pattern to form thermoelectric legs of 30 m depth and 100m diameter was successfully fabricated for micro thermoelectric device applications.