Uniform poly-Si TFTs for AMOLEDs using field-enhanced rapid thermal annealing
- Authors
- Ryu, S.-R.; Nam, S.-E.; Kim, H.-J.
- Issue Date
- 2007
- Publisher
- Trans Tech Publications Ltd
- Keywords
- AMLCD; AMOLED; Crystallization; TFTs
- Citation
- Solid State Phenomena, v.124-126, no.PART 1, pp.447 - 450
- Journal Title
- Solid State Phenomena
- Volume
- 124-126
- Number
- PART 1
- Start Page
- 447
- End Page
- 450
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24210
- DOI
- 10.4028/3-908451-31-0.447
- ISSN
- 1012-0394
- Abstract
- Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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