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High frequency modulation effects on the relative intensity noise properties of 405 nm InAlGaN laser diodes
- Issue Date
- 2007
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- Physica Status Solidi (C) Current Topics in Solid State Physics, v.4, no.5, pp.1617 - 1620
- Volume
- 4
- Number
- 5
- Start Page
- 1617
- End Page
- 1620
- ISSN
- 1862-6351
- Abstract
- The high frequency modulation effects on the relative intensity noise (RIN) characteristics of 405 nm InAlGaN laser diodes have been investigated taking into account the strain and thermal effects on the laser diode itself as well as external optical feedback effects. The simulation results indicate that the critical external optical feedback for -125 dB/Hz RIN is around 0.1%, a typical order found in practical DVD operating environments.By optimizing the injection current levels and its frequency, one can reduce the RIN with 0.1∼1% external feedback effect by more than 15 dB/Hz. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
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Related Researcher
- Yi, Jong Chang
- Engineering (Electronic & Electrical Engineering)