Characteristic improvements for bottom contact OTFTs with self-assembled monolayer formed by ALD

Abstract

The characteristics of bottom contact organic thin film transistors have been improved by using self-assembled monolayers on the polymeric gate insulator. SAMs were formed using atomic layer deposition method onto gate insulator. ALD is an ultra-thin film deposition technique based on sequences of self-limiting surface reactions enabling thickness control on atomic scale. Upon the investigations, it is observed that SAMs modify the surface polarity of PVP gate insulator and influence the growth of subsequent organic semiconductor layer, and thereby, the electric conductivity and roughness of the pentacene film are improved. The performances of the bottom-contact OTFTs can be enhanced by SAMs.