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Gate dielectric integrity of all organic thin film transistor and annealing effect
- Authors
- Hong, S.H.; Kang, J.M.; Lim, T.; Kim, J.H.; Choi, J.S.; Kim, Y.M.
- Issue Date
- 2007
- Keywords
- Anneal; Gate leakage; OTFTs; Pentacene; Polymer dielectric; Polystyrene
- Citation
- AD'07 - Proceedings of Asia Display 2007, v.2, pp.1696 - 1699
- Journal Title
- AD'07 - Proceedings of Asia Display 2007
- Volume
- 2
- Start Page
- 1696
- End Page
- 1699
- ISSN
- 0000-0000
- Abstract
- A significant degradation in the organic gate dielectric integrity is reported when an organic thin film transistor (OTFT) is exposed to air. The OTFT with polystyrene (PS) gate dielectric shows an increased IOFF when the device has been exposed to air for a few weeks. The increased I OFF is found to be attributed to degraded PS insulator property. The poor integrity of the gate dielectric causes an excessive I0FF of the OTFT. Interestingly, the gate leakage current can be suppressed after the device is subjected to a few I - V tests at elevated temperatures and then reasonable IOFF can be recovered.
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