Thermopower profiling across a silicon p-n junction through the 2ω signal measurement of AC current-heated tip-sample nano-contact
- Authors
- Kyeongtae, K.; Jisang, P.; Sun, U.K.; Ohmyoung, K.; Joon, S.L.; Seung, H.P.; Young, K.C.
- Issue Date
- 2007
- Citation
- 1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1, pp.177 - 181
- Journal Title
- 1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1
- Start Page
- 177
- End Page
- 181
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24297
- DOI
- 10.1109/THETA.2007.363437
- ISSN
- 0000-0000
- Abstract
- Thermopower profiling with nanometer resolution has important applications in the development of nano-structured high ZT thermoelectric materials and in dopant density profiling of nano-electronic devices. We suggested a new AC type thermopower measurement technique and demonstrated it with a simple experimental setup. Thermopower distribution across a silicon p-n junction was measured point-by-point at every 10 nm free from the noises due to built-in potential andphoto-ionization effect and compared with theoretical result. Although this new AC type thermopower measurement technique could not follow the sharp variation of the theoretical thermopower near the p-n junction, it could identify a smooth peak of thermopower distribution in the depletion layer of the p-n junction. © 2007 IEEE.
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Collections - College of Engineering > Department of Mechanical and System Design Engineering > 1. Journal Articles
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