On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer
DC Field | Value | Language |
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dc.contributor.author | Im, Ki-Sik | - |
dc.contributor.author | Choi, Uiho | - |
dc.contributor.author | Kim, Minho | - |
dc.contributor.author | Choi, Jinseok | - |
dc.contributor.author | Kim, Hyun-Seop | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.contributor.author | An, Sung Jin | - |
dc.contributor.author | Nam, Okhyun | - |
dc.date.accessioned | 2022-01-20T05:40:44Z | - |
dc.date.available | 2022-01-20T05:40:44Z | - |
dc.date.created | 2022-01-20 | - |
dc.date.issued | 2022-01-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24330 | - |
dc.description.abstract | The AlGaN/GaN heterojunction field-effect transistor (HFET) with an AlN buffer layer (the proposed device) was fabricated, and its noise performances were investigated compared to the conventional AlGaN/GaN HFET with a GaN buffer layer (the reference device). Both devices with a gate length of 0.5 mu m demonstrated 1/f noise properties with carrier number fluctuations channel mechanism, regardless of the buffer layer. The proposed device had higher off-state leakage current and larger trap density (N-t) than those of the reference device because of the partially strained GaN (83% relaxed GaN) channel grown on a AlN buffer layer. However, the noise measurements at off-state proved that the generation-recombination (g-r) noise is absent in the proposed device due to the AlN buffer layer with high bandgap energy (E-g = 6.2 eV), whereas the reference device suffers from the g-r noise in the GaN buffer layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AIP Publishing | - |
dc.subject | HIGH BREAKDOWN VOLTAGE | - |
dc.subject | LOW-FREQUENCY NOISE | - |
dc.title | On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.1063/5.0074137 | - |
dc.identifier.scopusid | 2-s2.0-85123020125 | - |
dc.identifier.wosid | 000739170500010 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.120, no.1 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 120 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH BREAKDOWN VOLTAGE | - |
dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
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