Advantages of NiOx electrode over Au in low-voltage tetracene-based phototransistors
DC Field | Value | Language |
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dc.contributor.author | Choi, Jeong-M. | - |
dc.contributor.author | Lee, Kimoon | - |
dc.contributor.author | Hwang, D. K. | - |
dc.contributor.author | Kim, Jae Hoon | - |
dc.contributor.author | Im, Seongil | - |
dc.contributor.author | Park, Ji Hoon | - |
dc.contributor.author | Kim, Eugene | - |
dc.date.accessioned | 2022-02-07T05:40:46Z | - |
dc.date.available | 2022-02-07T05:40:46Z | - |
dc.date.created | 2022-02-07 | - |
dc.date.issued | 2006-12-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24486 | - |
dc.description.abstract | We report on the tetracene-based photo-thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenol (PVP)/aluminum oxide (AlOx) bilayer for a gate dielectric and two different source/drain (S/D) electrodes: semitransparent NiOx and Au. Our tetracene-based TFT with NiOx S/D electrode exhibited quite good field effect mobility (mu=similar to 0.23 cm(2)/V s), high on/off current ratio (I-on/I-off) of similar to 10(5), and good photo-to-dark current ratio (I-ph/I-dark=similar to 10(4)) under an ultraviolet (364 nm) illumination while that with Au S/D electrodes showed much lower device performance (mu=similar to 0.08 cm(2)/V s, I-on/I-off=similar to 10(4), and I-ph/I-dark=similar to 20), although the both TFTs operated at a low voltage of -8 V. With the hole-injection and light-reception advantages of NiOx electrode, our tetracene photo-TFT demonstrated good dynamic optical gating. (c) 2006 American Institute of Physics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | PAPER | - |
dc.subject | GATE | - |
dc.title | Advantages of NiOx electrode over Au in low-voltage tetracene-based phototransistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eugene | - |
dc.identifier.doi | 10.1063/1.2396712 | - |
dc.identifier.scopusid | 2-s2.0-33845749700 | - |
dc.identifier.wosid | 000242887400201 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.100, no.11 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 100 | - |
dc.citation.number | 11 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | PAPER | - |
dc.subject.keywordPlus | GATE | - |
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