High-performance low-voltage tetracene phototransistors with polymer/AlOx bilayer dielectric
DC Field | Value | Language |
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dc.contributor.author | Choi, Jeong-M. | - |
dc.contributor.author | Lee, Kimoon | - |
dc.contributor.author | Hwang, D. K. | - |
dc.contributor.author | Park, Ji Hoon | - |
dc.contributor.author | Kim, Eugene | - |
dc.contributor.author | Im, Seongil | - |
dc.date.accessioned | 2022-02-07T05:43:35Z | - |
dc.date.available | 2022-02-07T05:43:35Z | - |
dc.date.created | 2022-02-07 | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24624 | - |
dc.description.abstract | We report on the tetracene-based photo thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenol (PVP)/aluminum oxide (AlOx) bilayer and semitransparent NiOx for a gate dielectric and source/drain (S/D) electrode, respectively. Quite a large capacitance of 31 nF/cm(2) was effectively achieved from the thin polymer/high-k oxide dielectric bilayer that also showed a high dielectric strength of similar to 4 MV/cm. Our tetracene-based TFTs exhibited quite a good field effect mobility (similar to 0.23 cm(2)/V s) and a high on/off current ratio of similar to 10(5), while operating at a voltage less than -8 V. The tetracene-TFTs demonstrated good static photoresponses to green (540 nm), blue (450 nm), and ultraviolet (364 nm) illuminations under the low voltage. (c) 2006 The Electrochemical Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | GATE | - |
dc.subject | ELECTRONICS | - |
dc.subject | MOBILITY | - |
dc.subject | CHANNEL | - |
dc.subject | PAPER | - |
dc.title | High-performance low-voltage tetracene phototransistors with polymer/AlOx bilayer dielectric | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eugene | - |
dc.identifier.doi | 10.1149/1.2211847 | - |
dc.identifier.wosid | 000239283500023 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.9, pp.G289 - G291 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | G289 | - |
dc.citation.endPage | G291 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | PAPER | - |
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