Atomic layer deposition of Al2O3/NiO/Al 2O3 laminate structures for nonvolatile memory device applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, W. | - |
dc.contributor.author | You, Y.-H. | - |
dc.contributor.author | Lee, S.S. | - |
dc.contributor.author | Chung, T.-M. | - |
dc.contributor.author | Lee, Y.K. | - |
dc.contributor.author | Kim, C.G. | - |
dc.contributor.author | Hwang, J.-H. | - |
dc.contributor.author | An, K.-S. | - |
dc.date.accessioned | 2022-02-07T07:42:30Z | - |
dc.date.available | 2022-02-07T07:42:30Z | - |
dc.date.created | 2022-02-07 | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25043 | - |
dc.description.abstract | We have fabricated Al2O3/NiO/Al2O 3 nano-laminate structures on Si(001) substrate using atomic layer deposition (ALD) technique for floating gate memory application. The nonvolatile capacitance-voltage (C-V) characterisitics have been investigated. NiO and Al2O3 films, as charge trapping and insulating barrier layer, were deposited using newly-synthesized Ni aminoalkoxide (Ni(dmamb) 2) and trimethylaluminum (TMA) with H2O, respectively. The hysteresis voltage window of the Al2O3 (20nm)/NiO (5 nm)/Al2O3 (5 nm) laminate structure is ∼8.6 V in voltage sweep range from -7.5 to 7.5 V, while there is no hysteresis in the Al2O3 film. copyright The Electrochemical Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Electrochemical Society Inc. | - |
dc.title | Atomic layer deposition of Al2O3/NiO/Al 2O3 laminate structures for nonvolatile memory device applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, J.-H. | - |
dc.identifier.doi | 10.1149/1.2721498 | - |
dc.identifier.scopusid | 2-s2.0-45749090123 | - |
dc.identifier.bibliographicCitation | ECS Transactions, v.3, no.15, pp.283 - 285 | - |
dc.relation.isPartOf | ECS Transactions | - |
dc.citation.title | ECS Transactions | - |
dc.citation.volume | 3 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 283 | - |
dc.citation.endPage | 285 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
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