Atomic layer deposition of Al2O3/NiO/Al 2O3 laminate structures for nonvolatile memory device applications

Abstract

We have fabricated Al2O3/NiO/Al2O 3 nano-laminate structures on Si(001) substrate using atomic layer deposition (ALD) technique for floating gate memory application. The nonvolatile capacitance-voltage (C-V) characterisitics have been investigated. NiO and Al2O3 films, as charge trapping and insulating barrier layer, were deposited using newly-synthesized Ni aminoalkoxide (Ni(dmamb) 2) and trimethylaluminum (TMA) with H2O, respectively. The hysteresis voltage window of the Al2O3 (20nm)/NiO (5 nm)/Al2O3 (5 nm) laminate structure is ∼8.6 V in voltage sweep range from -7.5 to 7.5 V, while there is no hysteresis in the Al2O3 film. copyright The Electrochemical Society.