Crystallization of amorphous Si thin films using Sub-nm nickel oxide thin layers deposited by atomic layer deposition

Abstract

Atomic layer deposition of nickel oxide was employed to fabricate polycrystalline Si thin films on glass substrates via metal induced crystallization (MIC). Highly uniform deposition of nickel oxide was subjected to thermal treatment under reducing atmosphere, resulting in films exhibiting higher transmission in UV-Visible radiation and superior surface roughness. Raman spectroscopy allowed quantification of amorphous and crystalline portions, in addition to the estimation on dangling bonds. High-quality Si thin films were obtained through nickel silicide. Atomic layer deposition of nickel-species will be discussed in Si crystallization. copyright The Electrochemical Society.