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Reverse annealing of P+/B+ ion shower doped poly-Si
- Authors
- Jin, B.-J.; Hong, W.-E.; Ro, J.-S.
- Issue Date
- 2006
- Citation
- Proceedings of International Meeting on Information Display, v.2006, pp.752 - 755
- Volume
- 2006
- Start Page
- 752
- End Page
- 755
- ISSN
- 1738-7558
- Abstract
- Reverse annealing was observed in P+/B+ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of PH3/H2 or B2H6/H2. Activation annealing was conducted using a tube furnace in the temperature ranges from 350°C to 650°C. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at 550°C in P+ ion shower doped poly-Si, while at 350°C in the case of B-doping.
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