Late-news paper: Millisecond crystallization of amorphous silicon film using Joule heating
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ro, J.-S. | - |
dc.contributor.author | Hong, W.-E. | - |
dc.date.accessioned | 2022-02-07T07:43:17Z | - |
dc.date.available | 2022-02-07T07:43:17Z | - |
dc.date.created | 2022-02-07 | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 0097-966X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25085 | - |
dc.description.abstract | A novel crystallization technology for amorphous silicon film using Joule heating was attempted in this study. An electric field is applied to a conductive layer, underneath, or, above, a silicon film to induce Joule heating to generate intense heat in order to carry out crystallization of amorphous silicon. Power density was more than 1,000 watt/cm and heating rate was higher than 100,000°C/sec under typical conditions of the experiments. Crystallization was accomplished uniformly throughout the sample within a few tens of milliseconds of the heating demonstrating a possibility of a new crystallization route of amorphous silicon films. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.title | Late-news paper: Millisecond crystallization of amorphous silicon film using Joule heating | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, J.-S. | - |
dc.identifier.scopusid | 2-s2.0-34547586472 | - |
dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.37, no.3, pp.1259 - 1262 | - |
dc.relation.isPartOf | Digest of Technical Papers - SID International Symposium | - |
dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
dc.citation.volume | 37 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1259 | - |
dc.citation.endPage | 1262 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
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