Late-news paper: Millisecond crystallization of amorphous silicon film using Joule heating
- Authors
- Ro, J.-S.; Hong, W.-E.
- Issue Date
- 2006
- Citation
- Digest of Technical Papers - SID International Symposium, v.37, no.3, pp.1259 - 1262
- Journal Title
- Digest of Technical Papers - SID International Symposium
- Volume
- 37
- Number
- 3
- Start Page
- 1259
- End Page
- 1262
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25085
- ISSN
- 0097-966X
- Abstract
- A novel crystallization technology for amorphous silicon film using Joule heating was attempted in this study. An electric field is applied to a conductive layer, underneath, or, above, a silicon film to induce Joule heating to generate intense heat in order to carry out crystallization of amorphous silicon. Power density was more than 1,000 watt/cm and heating rate was higher than 100,000°C/sec under typical conditions of the experiments. Crystallization was accomplished uniformly throughout the sample within a few tens of milliseconds of the heating demonstrating a possibility of a new crystallization route of amorphous silicon films.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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