Late-news paper: Millisecond crystallization of amorphous silicon film using Joule heating

Abstract

A novel crystallization technology for amorphous silicon film using Joule heating was attempted in this study. An electric field is applied to a conductive layer, underneath, or, above, a silicon film to induce Joule heating to generate intense heat in order to carry out crystallization of amorphous silicon. Power density was more than 1,000 watt/cm and heating rate was higher than 100,000°C/sec under typical conditions of the experiments. Crystallization was accomplished uniformly throughout the sample within a few tens of milliseconds of the heating demonstrating a possibility of a new crystallization route of amorphous silicon films.