Joule-heating induced crystallization using a conductive layer (JICCL): Millisecond-crystallization
- Authors
- Hong, W.-E.; Lee, J.-Y.; Ro, J.-S.
- Issue Date
- 2006
- Citation
- IDW '06 - Proceedings of the 13th International Display Workshops, v.2, pp.685 - 688
- Journal Title
- IDW '06 - Proceedings of the 13th International Display Workshops
- Volume
- 2
- Start Page
- 685
- End Page
- 688
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25098
- ISSN
- 0000-0000
- Abstract
- An electric field was applied to a conductive layer to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Uniformly distributed fine grains were obtained due to enormously high heating rate of this process. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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