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Electromigration reliability of flip-chip bonded Sn-3.5Ag-0.5Cu solder bumps on thick Cu and thin Ni(V)/Cu under bump metallurgies

Authors
Choi, JHJun, SWWon, HJJung, BYOh, TSTu, KN
Issue Date
Nov-2005
Publisher
KOREAN PHYSICAL SOC
Keywords
electromigration; flip chip; Sn-3.5Ag-0.5Cu; solder; UBM
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.47, pp.S454 - S458
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
47
Start Page
S454
End Page
S458
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25144
ISSN
0374-4884
Abstract
Electromigration reliability of flip-chip bonded Sn-3.5Ag-0.5Cu solder bumps on 10-mu m-thick Cu UBM and 0.4-mu m, Ni(V)/0.4-mu m Cu UBM was characterized by measuring mean-time-to-failure with current densities of 3 similar to 4 x 10(4) A/cm(2) at 130 similar to 185 degrees C. Microstructural analysis of the solder bumps clearly revealed that electromigration failure of the solder bumps occurred with UBM consumption and void formation at the cathode side of the solder bump. Activation energies for solder electromigration, evaluated with the calibrated test temperature which was obtained by adding the temperature increment by Joule heating to the apparent test temperature, were 0.9 eV/atom on 10-mu m-thick Cu UBM and 1.3 eV/atom on 0.4-mu m Ni(V)/0.4-mu m Cu UBM at current densities of 3 similar to 4 x 10(4) A/cm(2).
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