Electromigration Reliability of Flip-Chip Bonded Sn-3.5Ag-0.5Cu Solder BumpsElectromigration Reliability of Flip-Chip Bonded Sn-3.5Ag-0.5Cu Solder Bumps
- Other Titles
- Electromigration Reliability of Flip-Chip Bonded Sn-3.5Ag-0.5Cu Solder Bumps
- Authors
- 최재훈; 전성우; 정부양; 오태성; King-Ning Tu; 원혜진
- Issue Date
- 2005
- Publisher
- 한국물리학회
- Keywords
- Electromigration; Flip chip; Sn-3.5Ag-0.5Cu; Solder; UBM
- Citation
- Journal of the Korean Physical Society, v.47, no.3, pp.454 - 458
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 47
- Number
- 3
- Start Page
- 454
- End Page
- 458
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25633
- ISSN
- 0374-4884
- Abstract
- Electromigration reliability of
ip-chip bonded Sn-3.5Ag-0.5Cu solder bumps on 10- m-thick Cu
UBM and 0.4- m Ni(V)/0.4- m Cu UBM was characterized by measuring mean-time-to-failure
with current densities of 3 4 104 A/cm2 at 130 185 C. Microstructural analysis of the
solder bumps clearly revealed that electromigration failure of the solder bumps occurred with UBM
consumption and void formation at the cathode side of the solder bump. Activation energies for
solder electromigration, evaluated with the calibrated test temperature which was obtained by
adding the temperature increment by Joule heating to the apparent test temperature, were 0.9
eV/atom on 10- m-thick Cu UBM and 1.3 eV/atom on 0.4- m Ni(V)/0.4- m Cu UBM at current
densities of 3 4 104 A/cm2.
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