Application of field-enhanced rapid thermal annealing to activation of doped polycrystalline Si thin films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | So, B.S. | - |
dc.contributor.author | You, Y.H. | - |
dc.contributor.author | Kim, H.J. | - |
dc.contributor.author | Kim, Y.H. | - |
dc.contributor.author | Hwang, J.H. | - |
dc.contributor.author | Shin, D.H. | - |
dc.contributor.author | Ryu, S.R. | - |
dc.contributor.author | Choi, K. | - |
dc.contributor.author | Kim, Y.C. | - |
dc.date.accessioned | 2022-02-17T05:42:13Z | - |
dc.date.available | 2022-02-17T05:42:13Z | - |
dc.date.created | 2022-02-17 | - |
dc.date.issued | 2005 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25656 | - |
dc.description.abstract | Activation of polycrystalline silicon (poly-Si) thin films doped as n-type using selective ion implantation of phosphorous was performed employing field-enhanced rapid thermal annealing where rapid thermal annealing of halogen lamps is combined with alternating magnetic fields. The ion activation was evaluated using Hall effect measurements incorporating the resistivity, the charge carrier concentration, and the mobility. Statistical design of experiments is attempted in order to clarify the effects and interactions of processes variables on field-enhanced rapid thermal annealing towards ion activation: the three processing variables are furnace temperature, power of halogen lamp, and the alternating magnetic field. Hall effect measurements indicate that the furnace temperature and RTA power are found to be dominant in activating the doped polycrystalline Si in dose. The activation process results from the competition between charge carrier concentration and mobility: the increase in mobility is larger than the decrease in charge carrier concentration. © 2005 Materials Research Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Materials Research Society | - |
dc.title | Application of field-enhanced rapid thermal annealing to activation of doped polycrystalline Si thin films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, H.J. | - |
dc.contributor.affiliatedAuthor | Hwang, J.H. | - |
dc.identifier.doi | 10.1557/proc-862-a2.4 | - |
dc.identifier.scopusid | 2-s2.0-30544447897 | - |
dc.identifier.bibliographicCitation | Materials Research Society Symposium Proceedings, v.862, pp.275 - 280 | - |
dc.relation.isPartOf | Materials Research Society Symposium Proceedings | - |
dc.citation.title | Materials Research Society Symposium Proceedings | - |
dc.citation.volume | 862 | - |
dc.citation.startPage | 275 | - |
dc.citation.endPage | 280 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.