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Solid phase crystallization of amorphous silicon at temperatures higher than 600°C
- Authors
- Hong, W.-E.; Oh, S.-J.; Ro, J.-S.
- Issue Date
- 2005
- Citation
- IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005, no.2, pp.1187 - 1190
- Journal Title
- IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005
- Number
- 2
- Start Page
- 1187
- End Page
- 1190
- ISSN
- 0000-0000
- Abstract
- A metal foil would have a great potential as a substrate for the next generation flexible display. The annealing temperature of solid phase crystallization (SPC) is not restricted to 60°C when using a metal foil. Crystallization rate becomes dramatically rapid at higher temperatures since SPC kinetics is controlled by nucleation with high value of activation energy. We report SPC behaviors of high temperature, including kinetics, defect-recovery and texture-evolution, compared to those of low temperature.
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