Magnetic properties and Hall effect of CoZrGd films
- Authors
- Shin, DH; Kim, HJ; Ranno, L; Suran, G
- Issue Date
- Jun-2004
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.7, pp.1514 - 1517
- Journal Title
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Volume
- 241
- Number
- 7
- Start Page
- 1514
- End Page
- 1517
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25763
- DOI
- 10.1002/pssb.200304594
- ISSN
- 0370-1972
- Abstract
- The Hall properties of amorphous CoZrGd films (2 at% < Gd < 30 at%) were compared with their magnetic properties, since the temperature dependence of the saturation magnetization is easily controlled by changing the Co and Gd composition ratio. By considering the sub-lattice magnetizations M(Gd) and M(Co), the calculated spontaneous Hall resistivity (rho(H)) increases slightly from 1.8 x 10(-12) W m/G to 3 x 10(-12) W m/G as the Gd concentration increased. It is revealed that almost all of the electron scattering originates from skew scattering. An anomalous over-fluctuation of rho(H) most marked around the compensation temperature is also reported. 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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