Magnetic properties and Hall effect of CoZrGd films

Abstract

The Hall properties of amorphous CoZrGd films (2 at% < Gd < 30 at%) were compared with their magnetic properties, since the temperature dependence of the saturation magnetization is easily controlled by changing the Co and Gd composition ratio. By considering the sub-lattice magnetizations M(Gd) and M(Co), the calculated spontaneous Hall resistivity (rho(H)) increases slightly from 1.8 x 10(-12) W m/G to 3 x 10(-12) W m/G as the Gd concentration increased. It is revealed that almost all of the electron scattering originates from skew scattering. An anomalous over-fluctuation of rho(H) most marked around the compensation temperature is also reported. 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.