Dopant-activation and damage-recovery of Ion-shower-doped poly-Si through PH3/H2 after furnace annealing

Abstract

Ion shower doping with a main ion source of P2Hx using a source gas mixture of PH3/H2 was conducted on excimerlaser-annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIMcode simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance. © 2004 Taylor & Francis Group, LLC.