Dopant-activation and damage-recovery of Ion-shower-doped poly-Si through PH3/H2 after furnace annealing
- Authors
- Kim, D.; Kim, D.; Ro, J.; Choi, K.; Lee, K.
- Issue Date
- 2004
- Keywords
- Dopant activation; Ion shower doping; LTPS (low temperature Poly-Si)
- Citation
- Journal of Information Display, v.5, no.1, pp.1 - 6
- Journal Title
- Journal of Information Display
- Volume
- 5
- Number
- 1
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25886
- DOI
- 10.1080/15980316.2004.9651933
- ISSN
- 1598-0316
- Abstract
- Ion shower doping with a main ion source of P2Hx using a source gas mixture of PH3/H2 was conducted on excimerlaser-annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIMcode simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance. © 2004 Taylor & Francis Group, LLC.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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