Electrical characteristics of SrxBi2.4Ta2O9 thin film and Pt/Sr0.85Bi2.4Ta2O9/Al2O3/Si structure
- Authors
- Kim, JW; Choi, JH; Oh, TS
- Issue Date
- 1-May-2003
- Publisher
- SPRINGER
- Citation
- JOURNAL OF MATERIALS SCIENCE, v.38, no.9, pp.1853 - 1857
- Journal Title
- JOURNAL OF MATERIALS SCIENCE
- Volume
- 38
- Number
- 9
- Start Page
- 1853
- End Page
- 1857
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25977
- DOI
- 10.1023/A:1023579708755
- ISSN
- 0022-2461
- Abstract
- SrxBi2.4Ta2O9 ( 0.7 less than or equal to x less than or equal to 1.3) thin films were processed by metalorganic decomposition and their ferroelectric characteristics were investigated. The Sr-deficient SrxBi2.4Ta2O9 films exhibited well-developed ferroelectric hysteresis curves compared to those of the Sr-excess films, and Sr0.85Bi2.4Ta2O9 film had the optimum electrical characteristics among SrxBi2.4Ta2O9 films. Electrical characteristics of the Pt/SBT/Al2O3/Si structure using Sr0.85Bi2.4Ta2O9(SBT) film were investigated for metalferroelectric- insulator-semiconductor field-effect-transistor (MFIS-FET) applications. Memory window of C-V hysteresis characteristics of the Pt/SBT/Al2O3/Si structure became large with decreasing the Al2O3 thickness, and the Pt/SBT(400 nm)/ Al2O3 (10 nm)/ Si structure gave memory window of 2.2 V at sweeping voltages of +/- 5 V. The Pt/SBT/Al2O3/Si structure can be proposed for MFIS-FET applications. (C) 2003 Kluwer Academic Publishers.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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