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Electrical properties of the Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structure with variation of the Sr0.85Bi2.4Ta2O9 film thickness
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, JW | - |
| dc.contributor.author | Park, JD | - |
| dc.contributor.author | Choi, JH | - |
| dc.contributor.author | Oh, TS | - |
| dc.date.accessioned | 2022-03-14T07:43:48Z | - |
| dc.date.available | 2022-03-14T07:43:48Z | - |
| dc.date.created | 2022-03-14 | - |
| dc.date.issued | 2003-04-01 | - |
| dc.identifier.issn | 0261-8028 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25987 | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | SPRINGER | - |
| dc.subject | FIELD-EFFECT TRANSISTOR | - |
| dc.subject | THIN-FILMS | - |
| dc.title | Electrical properties of the Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structure with variation of the Sr0.85Bi2.4Ta2O9 film thickness | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Oh, TS | - |
| dc.identifier.doi | 10.1023/A:1022994521453 | - |
| dc.identifier.wosid | 000181822100011 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS SCIENCE LETTERS, v.22, no.7, pp.535 - 537 | - |
| dc.relation.isPartOf | JOURNAL OF MATERIALS SCIENCE LETTERS | - |
| dc.citation.title | JOURNAL OF MATERIALS SCIENCE LETTERS | - |
| dc.citation.volume | 22 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 535 | - |
| dc.citation.endPage | 537 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
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