유기 발광 소자에서 정공 주입 버퍼층의 효과Effects of Hole-Injection Buffer Layer in Organic Light-Emitting Diodes
- Other Titles
- Effects of Hole-Injection Buffer Layer in Organic Light-Emitting Diodes
- Authors
- 정동회; 김상걸; 오현석; 홍진웅; 이준웅; 김태완
- Issue Date
- 2003
- Publisher
- 한국전기전자재료학회
- Keywords
- Organic light-emitting diodes; Buffer layer; Current-voltage characteristics; Luminous efficiency; RGB color spectrum
- Citation
- 전기전자재료학회논문지, v.16, no.9
- Journal Title
- 전기전자재료학회논문지
- Volume
- 16
- Number
- 9
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/26067
- ISSN
- 1226-7945
- Abstract
- Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K ~ 300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq3) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From the analysis of electroluminescence (EL) and photoluminescence (PL) spectra of the Alq3, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDs. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDs.
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