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Investigation of the modulation efficiency of depleted InGaAsP/InP ridge waveguide phase modulators at 1.55 mu m
- Issue Date
- 2003
- Publisher
- IOP PUBLISHING LTD
- Citation
- COMPOUND SEMICONDUCTORS 2002, v.174, pp.435 - 438
- Journal Title
- COMPOUND SEMICONDUCTORS 2002
- Volume
- 174
- Start Page
- 435
- End Page
- 438
- ISSN
- 0951-3248
- Abstract
- Single mode depleted p-n InGaAsP/InP ridge waveguide phase modulators have been fabricated and investigated at 1.55mum. The phase modulation efficiency of the device was characterized by using the Fabry-Perot resonance method with a tunable laser. The measured phase modulation efficiency for a 2 mm long device was determined as high as 34 deg/V(.)mm for TE mode. This value corresponds to the highest experimental electrooptic modulation efficiency reported so far for InGaAsP/InP p-n phase modulators at the said wavelength region.
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Related Researcher
- Yi, Jong Chang
- Engineering (Electronic & Electrical Engineering)