Point defects and related properties of highly co-doped bixbyite In2O3
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mason, TO | - |
dc.contributor.author | Gonzalez, GB | - |
dc.contributor.author | Hwang, JH | - |
dc.contributor.author | Kammler, DR | - |
dc.date.accessioned | 2022-03-14T09:44:09Z | - |
dc.date.available | 2022-03-14T09:44:09Z | - |
dc.date.created | 2022-03-14 | - |
dc.date.issued | 2003 | - |
dc.identifier.issn | 1463-9076 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/26648 | - |
dc.description.abstract | The method of co-doping has been employed to achieve and study the influence of high defect populations in bixbyite In2O3. Substantial metastable Sn-doping levels can be achieved in nanocrystalline In2O3 with associated co-doping by oxygen interstitials. The resulting electrical properties, diffraction data (X-ray and neutron), and EXAFS studies support the presence of 2 : 1 Sn-oxygen interstitial point defect clusters. Upon reduction, some of these clusters can be reduced to liberate donors and generate charge carriers. Extensive Cd/Sn co-substitution for indium in In2O3 has been achieved in equilibrium solid solutions. This self-compensated (isovalent) and relatively size-matched substitution reveals a tendency for off-stoichiometry in favor of donors, resulting in "self-doped'' behavior irrespective of oxygen partial pressure. Rami. cations of bixbyite defect structure for transparent electrode applications are discussed. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | TRANSPARENT CONDUCTING OXIDES | - |
dc.subject | RAY-ABSORPTION-SPECTROSCOPY | - |
dc.subject | INDIUM-TIN-OXIDE | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | PHASE-RELATIONS | - |
dc.subject | SYSTEM | - |
dc.subject | DIFFRACTION | - |
dc.subject | CHEMISTRY | - |
dc.title | Point defects and related properties of highly co-doped bixbyite In2O3 | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, JH | - |
dc.identifier.doi | 10.1039/b300171g | - |
dc.identifier.scopusid | 2-s2.0-0038180550 | - |
dc.identifier.wosid | 000182961400005 | - |
dc.identifier.bibliographicCitation | PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.5, no.11, pp.2183 - 2189 | - |
dc.relation.isPartOf | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.citation.title | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 2183 | - |
dc.citation.endPage | 2189 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.subject.keywordPlus | TRANSPARENT CONDUCTING OXIDES | - |
dc.subject.keywordPlus | RAY-ABSORPTION-SPECTROSCOPY | - |
dc.subject.keywordPlus | INDIUM-TIN-OXIDE | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | PHASE-RELATIONS | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordPlus | DIFFRACTION | - |
dc.subject.keywordPlus | CHEMISTRY | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.