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Characteristic effects of hole injection on organic electrolurninescent devices
- Issue Date
- Dec-2002
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- organic electroluminescent device; ITO; buffer layer; alpha-septithiophene
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.1050 - 1053
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 41
- Number
- 6
- Start Page
- 1050
- End Page
- 1053
- ISSN
- 0374-4884
- Abstract
- In this study, the effects of indium-tin-oxide (ITO) surface treatment and the buffer layer on the characteristics of organic electroluminescent devices (OELDs) were investigated. We treated the ITO surface with phosphoric acid and inserted a 20-nm-thick rubbed alpha-Septithiophene layer as a buffer layer. As a result, the turn-on voltage of the device was reduced, and the luminance characteristics were improved. These results were due to enhanced hole injection caused by the lowered energy barrier in the ITO/TPD interface and to the increased hole density in the emission region.
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Collections - College of Engineering > Chemical Engineering Major > 1. Journal Articles
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