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Electro-optic intensity modulators at lambda=1.55 mu m utilizing strain-optic effects in LiNbO3
- Authors
- Jung, HS; Eknoyan, O; Taylor, HF
- Issue Date
- Aug-2001
- Publisher
- SPIE-INT SOCIETY OPTICAL ENGINEERING
- Keywords
- strain-induced intensity modulator; strain-optic effect; optical waveguide; LiNbO3; electro-optic effect
- Citation
- OPTICAL ENGINEERING, v.40, no.8, pp.1499 - 1501
- Journal Title
- OPTICAL ENGINEERING
- Volume
- 40
- Number
- 8
- Start Page
- 1499
- End Page
- 1501
- ISSN
- 0091-3286
- Abstract
- Electro-optic intensity modulators at lambda =1.55 mum are produced in LiNbO3 substrates using strain-induced channel waveguides formed by magnetron deposition of a surface metal film and lift-off technology. The static strain resulting from thermal expansion mismatch between the substrate and the metal film that is caused by the plasma temperature during deposition induces a localized increase in the refractive index via the strain-optic effect. Modulation depth of 100% at a pi -rad voltage of 16.1 V is demonstrated. Electro-optic modulation behaviors in channel waveguides fabricated using strain inducing surface metal film are compared to ones formed by thick SiO2 surface film. (C) 2001 society of Photo-Optical Instrumentation Engineers.
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Related Researcher
- Jung, Hong sik
- Science & Technology (Department of Electronic & Electrical Convergence Engineering)