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Fabrication of high frequency DC-DC converter using Ti/FeTaN film inductor

Authors
Kim, CSBae, SKim, HJNam, SEKim, HJ
Issue Date
Jul-2001
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
DC-DC converter; FeTaN; thin film inductor
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.37, no.4, pp.2894 - 2896
Journal Title
IEEE TRANSACTIONS ON MAGNETICS
Volume
37
Number
4
Start Page
2894
End Page
2896
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27205
DOI
10.1109/20.951339
ISSN
0018-9464
Abstract
We fabricated a planar-type film inductor with good high frequency characteristics using a FeTaN soft magnetic film. While FeTaN films inherently show good soft magnetic properties and high saturation magnetization, addition of Ti underlayer with a combination of magnetic field annealing leads to an increase of anisotropy field (H-k), thus improving high frequency characteristics. Planar-type spiral inductors using Ti/FeTaN films exhibit an inductance of similar to1 muH, resistance of similar to2 ohm, and Q factor of 2.3 at 2 MHz. We also fabricated a hybrid ZVS-CV buck converter using the film inductor. The converter shows about 80% of the conversion efficiency at 1.2 MHz, which withstands the load current up to 300 mA.
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