Fabrication of high frequency DC-DC converter using Ti/FeTaN film inductor
- Authors
- Kim, CS; Bae, S; Kim, HJ; Nam, SE; Kim, HJ
- Issue Date
- Jul-2001
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- DC-DC converter; FeTaN; thin film inductor
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.37, no.4, pp.2894 - 2896
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 37
- Number
- 4
- Start Page
- 2894
- End Page
- 2896
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27205
- DOI
- 10.1109/20.951339
- ISSN
- 0018-9464
- Abstract
- We fabricated a planar-type film inductor with good high frequency characteristics using a FeTaN soft magnetic film. While FeTaN films inherently show good soft magnetic properties and high saturation magnetization, addition of Ti underlayer with a combination of magnetic field annealing leads to an increase of anisotropy field (H-k), thus improving high frequency characteristics. Planar-type spiral inductors using Ti/FeTaN films exhibit an inductance of similar to1 muH, resistance of similar to2 ohm, and Q factor of 2.3 at 2 MHz. We also fabricated a hybrid ZVS-CV buck converter using the film inductor. The converter shows about 80% of the conversion efficiency at 1.2 MHz, which withstands the load current up to 300 mA.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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