Ferroelectric characteristics of the LSMCD-derived SrBi2.4Ta2O9 thin films

Abstract

SrBi2.4Ta2O9 (SBT) thin films of 70-400 nm thickness were prepared using liquid source misted chemical deposition (LSMCD), and their ferroelectric properties were characterized. When annealed at 800degreesC for I hour in oxygen ambient, the LSMCD-derived SBT film of 70 nm thickness exhibited the 2P(r) of 15.9 muC/cm(2) and E-c of 69 kV/cm at +/-5V. The LSMCD-derived SBT films exhibited the size effects, i.e., a decrease of the remanent polarization and the relative permittivity and an increase of the coercive field with a reduction of the film thickness. The LSMCD-derived SBT films with the thickness of 70-400 nm exhibited the fatigue-free behavior up to 10(12) switching cycles. The ferroelectric characteristics of the LSMCD-derived SBT films annealed at 600-800degreesC were improved by using 50 nm-thick SBT as a seed layer.