Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry
DC Field | Value | Language |
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dc.contributor.author | Mathine, DL | - |
dc.contributor.author | Woo, HS | - |
dc.contributor.author | He, W | - |
dc.contributor.author | Kim, TW | - |
dc.contributor.author | Kippelen, B | - |
dc.contributor.author | Peyghambarian, N | - |
dc.date.accessioned | 2022-04-14T05:41:13Z | - |
dc.date.available | 2022-04-14T05:41:13Z | - |
dc.date.created | 2022-04-14 | - |
dc.date.issued | 2000-06-26 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27349 | - |
dc.description.abstract | Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal-oxide-silicon (CMOS) circuitry. The 8x8 array of OLEDs is composed of 90 mu m micropixels with a 55 mu m separation. The OLEDs are based on an emitting layer of tris-(8-hydroxyquinoline)aluminum (Alq(3)) doped with coumarin 6 to provide green light emission. A layer of N,N'-diphenyl-N, N'-bis(3-methylphenyl)1-1'-biphenyl 1-4, 4'-diamine (TPD) was used as a hole transport layer and poly(ethylenedioxythiophene) doped with polystyrenesulfonate was used as a buffer layer between the TPD and the CMOS anode metal. Bright light was emitted through a semitransparent Mg:Ag cathode when the micropixel was driven by an individual current source. (C) 2000 American Institute of Physics. [S0003-6951(00)02126-4]. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DEVICE | - |
dc.title | Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, TW | - |
dc.identifier.doi | 10.1063/1.126798 | - |
dc.identifier.scopusid | 2-s2.0-0000875241 | - |
dc.identifier.wosid | 000087719800001 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.76, no.26, pp.3849 - 3851 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 76 | - |
dc.citation.number | 26 | - |
dc.citation.startPage | 3849 | - |
dc.citation.endPage | 3851 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DEVICE | - |
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