Electrical characteristics of pentacene organic thin film transistors with silicon dioxide gate insulator
- Authors
- Choi, JS; Kim, DY; Lee, JH; Kang, DY; Kim, YK; Shin, DM
- Issue Date
- 2000
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- organic thin film transistors; pentacene; evaporation; field-effect mobility; threshold voltage; on-off current ratio
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.349, pp.339 - 342
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 349
- Start Page
- 339
- End Page
- 342
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27435
- DOI
- 10.1080/10587250008024933
- ISSN
- 1542-1406
- Abstract
- Pentacene thin-film transistors(TFTS) were fabricated on glass substrates. Aluminum andgold were used for gale and source/drain electrodes. Silicon dioxide was deposited as a gate insulator by PECVD and patterned by reactive ion etching(RIE). The semiconducting pentacene layer was thermally evaporated in vacuum at a pressure of about 10(-8) Torr and a deposition rate of 0.3 Angstrom /sec. The fabricated devices exhibited the field-effect mobility as large as 0.07 cm(2)/V sec, threshold voltage as low as -3.3V, and the on/off current ratio larger than 10(7).
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