Delta-Doped β-(Al0.17Ga0.83)2O3/Ga2O3 Double-Channel Heterostructure MODFETs
DC Field | Value | Language |
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dc.contributor.author | Atmaca, G. | - |
dc.contributor.author | Cha, H.-Y. | - |
dc.date.accessioned | 2022-04-25T07:42:43Z | - |
dc.date.available | 2022-04-25T07:42:43Z | - |
dc.date.created | 2022-04-25 | - |
dc.date.issued | 2022-10-01 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27544 | - |
dc.description.abstract | Herein, in delta-doped β-(AlxGa1–x)2O3/β-Ga2O3 heterostructures, the 2D electron gas (2DEG) density is mainly limited by the low conduction-band offset at the heterointerface. Double-channel heterostructures may be a candidate solution for enhancing the 2DEG density in these heterostructures. In this study, the output characteristics, transfer, transconductance, and off-state current characteristics of delta-doped β-(Al0.17Ga0.83)2O3/β-Ga2O3 double-channel heterostructure modulation-doped field-effect transistors (MODFETs), including the effects of an ultrathin spacer layer and a back-barrier layer, are numerically evaluated. The electrical characteristics of the proposed double-channel heterostructure MODFET are compared with those of a single-channel heterostructure MODFET. The proposed double-channel heterostructure MODFET shows a maximum drain current of 133.7 mA mm−1 and a g m peak of 40 mS mm−1, which are higher than those in the single-channel case. The calculated threshold voltage is −3.45 V. The dependence of the Si δ-doping density in the second barrier and channel layer thickness on the electrical characteristics of the proposed device is evaluated and discussed. A β-(Al0.17Ga0.83)2O3/β-Ga2O3 superlattice back-barrier structure is also implemented in delta-doped β-Ga2O3-based heterostructure MODFETs to improve their off-state characteristics for the first time. © 2022 Wiley-VCH GmbH. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | John Wiley and Sons Inc | - |
dc.title | Delta-Doped β-(Al0.17Ga0.83)2O3/Ga2O3 Double-Channel Heterostructure MODFETs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, H.-Y. | - |
dc.identifier.doi | 10.1002/pssa.202100842 | - |
dc.identifier.scopusid | 2-s2.0-85128031738 | - |
dc.identifier.wosid | 000782524900001 | - |
dc.identifier.bibliographicCitation | Physica Status Solidi (A) Applications and Materials Science, v.219, no.20 | - |
dc.relation.isPartOf | Physica Status Solidi (A) Applications and Materials Science | - |
dc.citation.title | Physica Status Solidi (A) Applications and Materials Science | - |
dc.citation.volume | 219 | - |
dc.citation.number | 20 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | 2D electron gas (2DEG) | - |
dc.subject.keywordAuthor | delta-doped β-Ga2O3 heterostructures | - |
dc.subject.keywordAuthor | modulation-doped field-effect transistors (MODFETs) | - |
dc.subject.keywordAuthor | β-Ga2O3 | - |
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