Enhancement of magnetic anisotropy of nanocrystalline FeTaN films by Ti underlayers and magnetic field annealing
- Authors
- Shin, DH; Kim, CS; Ahn, DH; Nam, SE; Kim, HJ
- Issue Date
- 15-Apr-1999
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.85, no.8, pp.4568 - 4570
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 85
- Number
- 8
- Start Page
- 4568
- End Page
- 4570
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27604
- DOI
- 10.1063/1.370410
- ISSN
- 0021-8979
- Abstract
- Evolution of magnetic anisotropy in a FeTaN film was investigated as a function of annealing temperature, induction of magnetic field, and the addition of a Ti underlayer. The Fe78.8Ta8.5N12.7 films studied in this work are deposited as amorphous, and their soft magnetic properties evolve through the crystallization during postdeposition annealing. The films show a strong isotropy at all annealing temperatures with and without magnetic field induction. Employment of a Ti underlayer greatly enhances the uniaxial anisotropy when combined with a magnetic field annealing. The enhanced anisotropy leads to a significant improvement of high frequency response through an increased ferromagnetic resonance frequency. (C) 1999 American Institute of Physics. [S0021-8979(99)15208-3].
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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