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Enhancement of magnetic anisotropy of nanocrystalline FeTaN films by Ti underlayers and magnetic field annealing

Authors
Shin, DHKim, CSAhn, DHNam, SEKim, HJ
Issue Date
15-Apr-1999
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.85, no.8, pp.4568 - 4570
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
85
Number
8
Start Page
4568
End Page
4570
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27604
DOI
10.1063/1.370410
ISSN
0021-8979
Abstract
Evolution of magnetic anisotropy in a FeTaN film was investigated as a function of annealing temperature, induction of magnetic field, and the addition of a Ti underlayer. The Fe78.8Ta8.5N12.7 films studied in this work are deposited as amorphous, and their soft magnetic properties evolve through the crystallization during postdeposition annealing. The films show a strong isotropy at all annealing temperatures with and without magnetic field induction. Employment of a Ti underlayer greatly enhances the uniaxial anisotropy when combined with a magnetic field annealing. The enhanced anisotropy leads to a significant improvement of high frequency response through an increased ferromagnetic resonance frequency. (C) 1999 American Institute of Physics. [S0021-8979(99)15208-3].
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