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A high-speed ITO-InAlAs-InGaAs schottky-barrier photodetector
- Authors
- Wohlmuth, W.A.; Seo, J.-W.; Fay, P.; Caneau, C.; Adesida, I.
- Issue Date
- 1997
- Keywords
- Indium materials/devices; Photodetectors; Photodiodes; Schottky diodes; Semiconductor radiation detectors
- Citation
- IEEE Photonics Technology Letters, v.9, no.10, pp.1388 - 1390
- Journal Title
- IEEE Photonics Technology Letters
- Volume
- 9
- Number
- 10
- Start Page
- 1388
- End Page
- 1390
- ISSN
- 1041-1135
- Abstract
- A high-speed and high-sensitivity vertical indium-tin-oxide-InAlAs-InGaAs Schottky barrier photodetector has been designed, fabricated, and characterized. The devices had dark current densities as low as 8.87 × 10-5 A/cm-2 at an applied bias of 5 V. The responsivity for all the devices tested ranged from 0.55-0.60 A/W at a wavelength of 131 μm, and 0.563-0.583 A/W at 1.55 μm. The 15-μm diameter devices exhibited a -3 dB bandwidth of 19 and 25 GHz at a wavelength of 1.55 μm and an applied bias of 5 and 10 V, respectively. These are the best values of responsivity and bandwidth for a vertical InGaAs-based Schottky-barrier photodetector reported to date.
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Related Researcher
- Seo, Jong Wook
- Engineering (Electronic & Electrical Engineering)