PSPICE Modeling of InAlGaN LDs Using the Multistate Rate Equations

Abstract

The static and dynamic operating characteristics of blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were investigated using the rate equations with the three-level model. The device parameters were obtained from the optical gain properties of the MQW active region using the self-consistent numerical method for the multiband Hamiltonian for the strained wurtzite crystal. The performance of the LDs were analyzed by using the PSPICE equivalent circuit method and were compared with the 4th order Runge-Kutta method. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its pseudorandom binary sequence (PRBS) modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE. Finally their Q factor was analyzed.