Electro-Thermal Reliability Study of GaN High Electron Mobility Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chatterjee, B. | - |
dc.contributor.author | Lundh, J. S. | - |
dc.contributor.author | Dallas, J. | - |
dc.contributor.author | Kim, H. | - |
dc.contributor.author | Choi, S. | - |
dc.date.accessioned | 2022-06-10T05:40:36Z | - |
dc.date.available | 2022-06-10T05:40:36Z | - |
dc.date.created | 2022-06-10 | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 1087-9870 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/28156 | - |
dc.description.abstract | Self-heating in AlGaN/GaN high electron mobility transistors (HEMT) degrades device performance and reliability. Under nominal operating conditions, a so-called hot spot develops near the drain-side edge of the gate. The magnitude of the peak temperature at this local hot spot directly impacts device lifetime. Especially, such self-heating effects are aggravated in AlGaN/GaN HEMTs employing low cost silicon (Si) substrates that have relatively low thermal conductivity. In this work, GaN-on-Si HEMTs with symmetric geometries (identical gate-to-drain and gate-to-source lengths) were explored using thermoreflectance thermal imaging and infrared thermal microscopy to investigate and visualize the bias dependent self-heating phenomena. For the first time, a "fully-coupled" electro-thermal modeling scheme was developed in order to validate experimental observations and study internal electro-thermal phenomena. It was found that under identical power dissipation conditions (P=V-Ds*I-Ds=250 mW), a higher V-DS bias (similar to 23V) results in 35% larger rise in peak junction temperature compared to that for a lower V-DS (similar to 7.5 V) condition. The findings of this work confirm that bias conditions have a significant impact on device reliability and therefore must be considered when assessing device mean-time-to-failure (MTTF) through accelerated life time tests. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.subject | ALGAN/GAN HEMTS | - |
dc.subject | TEMPERATURE | - |
dc.subject | DEGRADATION | - |
dc.subject | DEPENDENCE | - |
dc.title | Electro-Thermal Reliability Study of GaN High Electron Mobility Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, H. | - |
dc.identifier.wosid | 000436999600067 | - |
dc.identifier.bibliographicCitation | PROCEEDINGS OF THE 2017 SIXTEENTH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017, pp.1247 - 1252 | - |
dc.relation.isPartOf | PROCEEDINGS OF THE 2017 SIXTEENTH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017 | - |
dc.citation.title | PROCEEDINGS OF THE 2017 SIXTEENTH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017 | - |
dc.citation.startPage | 1247 | - |
dc.citation.endPage | 1252 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 3 | - |
dc.relation.journalResearchArea | Thermodynamics | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Thermodynamics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | ALGAN/GAN HEMTS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordAuthor | III-V semiconductor materials | - |
dc.subject.keywordAuthor | electrothermal effects | - |
dc.subject.keywordAuthor | gallium nitride | - |
dc.subject.keywordAuthor | HEMTs | - |
dc.subject.keywordAuthor | infrared imaging | - |
dc.subject.keywordAuthor | reliability | - |
dc.subject.keywordAuthor | simulation | - |
dc.subject.keywordAuthor | temperature measurement | - |
dc.subject.keywordAuthor | thermoreflectance imaging | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.