Integrated Temperature Mapping of Lateral Gallium Nitride Electronics
- Authors
- Lundh, J. S.; Chatterjee, B.; Dallas, J.; Kim, H.; Choi, S.
- Issue Date
- 2017
- Publisher
- IEEE
- Keywords
- III-V semiconductor materials; electrothermal effects; gallium nitride; HEMTs; infrared imaging; power semiconductor devices; Raman scattering; reliability; simulation; temperature measurement; thermoreflectance imaging
- Citation
- PROCEEDINGS OF THE SIXTEENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017, pp.320 - 327
- Journal Title
- PROCEEDINGS OF THE SIXTEENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017
- Start Page
- 320
- End Page
- 327
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/28159
- ISSN
- 1087-9870
- Abstract
- For the first time, an integrated thermal characterization scheme that generates a full two-dimensional temperature map of GaN lateral devices has been developed. Through calibration and integration of micro-Raman thermometry, thermoreflectance thermal imaging, and infrared thermography, the accuracy of these techniques has been demonstrated to significantly improve, in addition to the complete thermal mapping capability. These techniques were utilized due to complementary attributes such as diverse material selectivity, probing depth, and spatial resolution. A coupled electro-thermal model was established to supplement experimental results and provide valuable insight into the electro-thermal phenomena governing device operation.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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