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GaN based Ethanol Sensor
- Authors
- Jung, Sunwoo; Baik, Kwang Hyeon; Jang, Soohwan
- Issue Date
- 2017
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 59 (SOTAPOCS 59), v.75, no.40, pp.9 - 12
- Volume
- 75
- Number
- 40
- Start Page
- 9
- End Page
- 12
- ISSN
- 1938-5862
- Abstract
- Silver Schottky diode on AlGaN/GaN high electron mobility transistor structure was investigated for the application of ethanol sensing. The device showed the decrease of current upon ethanol exposure from the measurement temperature of 200 degrees C due to the increase in Schottky barrier height. At 250 degrees C, the stable and fast current changes depending on the exposed ethanol concentrations from 0.0058 to 5.8% were observed.
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Related Researcher
- Baik, Kwang Hyeon
- Science & Technology (Department of Nanomaterials Engineering)