Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
DC Field | Value | Language |
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dc.contributor.author | 조성인 | - |
dc.contributor.author | 장원호 | - |
dc.contributor.author | 차호영 | - |
dc.contributor.author | 김형탁 | - |
dc.date.accessioned | 2022-06-15T07:40:42Z | - |
dc.date.available | 2022-06-15T07:40:42Z | - |
dc.date.issued | 2022-01-01 | - |
dc.identifier.issn | 2671-7255 | - |
dc.identifier.issn | 2671-7263 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/28580 | - |
dc.description.abstract | In this work, we report hot carrier-induced degradation in normally-on AlGaN/GaN high electron mobility transistors (HEMTs) with a 0.25-μm gate. To analyze the hot carrier effect, the semi-on state stress test was carried out and the DC and pulsed I-V characteristics were analyzed. The stress condition was set at the gate voltage of -3.8 V and the drain voltage of 40 V, where the drain current was at 10% of the maximum. After a stress test, the positive shift of the threshold voltage was observed and the drain current was decreased by 19%. In addition, the gate and drain lag phenomena were pronounced when measured by the pulse with a 1.23% duty cycle. The device degradation can be attributed to the hot electron-induced trapping during the semi-on stress test, which imposed the high electric field and the low channel temperature in the device. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | 한국전자파학회 | - |
dc.title | Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs | - |
dc.title.alternative | Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs | - |
dc.type | Article | - |
dc.publisher.location | 대한민국 | - |
dc.identifier.doi | 10.26866/jees.2022.3.r.89 | - |
dc.identifier.scopusid | 2-s2.0-85131931590 | - |
dc.identifier.wosid | 000813304800015 | - |
dc.identifier.bibliographicCitation | Journal of Electromagnetic Engineering and Science, v.22, no.3, pp 291 - 295 | - |
dc.citation.title | Journal of Electromagnetic Engineering and Science | - |
dc.citation.volume | 22 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 291 | - |
dc.citation.endPage | 295 | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002847035 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | AlGaN/GaN HEMT | - |
dc.subject.keywordAuthor | Degradation | - |
dc.subject.keywordAuthor | Hot Carrier Effect | - |
dc.subject.keywordAuthor | Reliability | - |
dc.subject.keywordAuthor | Trap. | - |
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