Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTsopen access
- Authors
- Kim, Dongwook; Lee, Hyeonju; Kim, Bokyung; Zhang, Xue; Bae, Jin-Hyuk; Choi, Jong-Sun; Baang, Sungkeun
- Issue Date
- 2-May-2022
- Publisher
- MDPI
- Keywords
- solution-processed a-IZO films; thin-film transistor; metal-nitrate precursor
- Citation
- MATERIALS, v.15, no.10
- Journal Title
- MATERIALS
- Volume
- 15
- Number
- 10
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/29481
- DOI
- 10.3390/ma15103416
- ISSN
- 1996-1944
- Abstract
- Understanding the chemical reaction pathway of the metal-salt precursor is essential for modifying the properties of solution-processed metal-oxide thin films and further improving their electrical performance. In this study, we focused on the structural growth of solution-processed amorphous indium-zinc-oxide (a-IZO) films and the electrical behavior of a-IZO thin-film transistors (TFT). To this end, solution-processed a-IZO films were prepared with respect to the Zn molar ratio, and their structural characteristics were analyzed. For the structural characteristic analysis of the a-IZO film, the cross-section, morphology, crystallinity, and atomic composition characteristics were used as the measurement results. Furthermore, the chemical reaction pathway of the nitrate precursor-based IZO solution was evaluated for the growth process of the a-IZO film structure. These interpretations of the growth process and chemical reaction pathway of the a-IZO film were assumed to be due to the thermal decomposition of the IZO solution and the structural rearrangement after annealing. Finally, based on the structural/chemical results, the electrical performance of the fabricated a-IZO TFT depending on the Zn concentration was evaluated, and the electrical behavior was discussed in relation to the structural characteristics.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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