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A 0.1-1.5 GHz All-Digital Phase Inversion Delay-Locked Loop

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dc.contributor.authorHan, Sangwoo-
dc.contributor.authorKim, Taejin-
dc.contributor.authorKim, Jongsun-
dc.date.accessioned2022-06-20T00:41:25Z-
dc.date.available2022-06-20T00:41:25Z-
dc.date.created2022-06-20-
dc.date.issued2013-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/29604-
dc.description.abstractAn all-digital, wide-range phase inversion delay-locked loop (PIDLL) with a high-resolution duty-cycle corrector (DCC) is presented. The proposed PIDLL utilizes a new phase inversion scheme to reduce the total number of delay elements (DEs) in the digitally controlled delay line (DCDL) by approximately one-half, enabling shorter locking times, lower power consumption, reduced jitter performance, and a smaller area, while maintaining a wide operating frequency range. To achieve high delay resolution and linear delay characteristics, a three-stage DCDL using a new area-efficient digital feedback delay element (FDE) is proposed. The FDE is also utilized to implement a new DCC that obtains a duty-cycle error of less than +/- 0.85% over a 30-70% input duty-cycle range. The proposed DCC-equipped PIDLL is implemented in a 0.13-mu m CMOS process, occupies an area of 0.11 mm(2), and operates over a wide frequency range of 0.1-1.5 GHz. It dissipates power of 5.9 mW from a 1.2 V supply at 1 GHz and exhibits a peak-to-peak output clock jitter of 11.25 ps at 1.5 GHz.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-
dc.subjectCMOS TECHNOLOGY-
dc.subjectCYCLE-
dc.subjectDRAM-
dc.subjectDLL-
dc.titleA 0.1-1.5 GHz All-Digital Phase Inversion Delay-Locked Loop-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Jongsun-
dc.identifier.wosid000330857500085-
dc.identifier.bibliographicCitationPROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), pp.341 - 344-
dc.relation.isPartOfPROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)-
dc.citation.titlePROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)-
dc.citation.startPage341-
dc.citation.endPage344-
dc.type.rimsART-
dc.type.docTypeProceedings Paper-
dc.description.journalClass3-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusCMOS TECHNOLOGY-
dc.subject.keywordPlusCYCLE-
dc.subject.keywordPlusDRAM-
dc.subject.keywordPlusDLL-
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